JPH0350423B2 - - Google Patents

Info

Publication number
JPH0350423B2
JPH0350423B2 JP62065725A JP6572587A JPH0350423B2 JP H0350423 B2 JPH0350423 B2 JP H0350423B2 JP 62065725 A JP62065725 A JP 62065725A JP 6572587 A JP6572587 A JP 6572587A JP H0350423 B2 JPH0350423 B2 JP H0350423B2
Authority
JP
Japan
Prior art keywords
circuit
input
voltage
bipolar transistor
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62065725A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63233560A (ja
Inventor
Yoshio Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP62065725A priority Critical patent/JPS63233560A/ja
Priority to US07/158,728 priority patent/US4849654A/en
Priority to KR1019880003016A priority patent/KR910001425B1/ko
Publication of JPS63233560A publication Critical patent/JPS63233560A/ja
Publication of JPH0350423B2 publication Critical patent/JPH0350423B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
JP62065725A 1987-03-23 1987-03-23 入力保護回路を備えた半導体集積回路 Granted JPS63233560A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62065725A JPS63233560A (ja) 1987-03-23 1987-03-23 入力保護回路を備えた半導体集積回路
US07/158,728 US4849654A (en) 1987-03-23 1988-02-22 Semiconductor integrated circuit with input protection circuit
KR1019880003016A KR910001425B1 (ko) 1987-03-23 1988-03-22 입력보호회로를 갖춘 반도체집적회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62065725A JPS63233560A (ja) 1987-03-23 1987-03-23 入力保護回路を備えた半導体集積回路

Publications (2)

Publication Number Publication Date
JPS63233560A JPS63233560A (ja) 1988-09-29
JPH0350423B2 true JPH0350423B2 (en]) 1991-08-01

Family

ID=13295281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62065725A Granted JPS63233560A (ja) 1987-03-23 1987-03-23 入力保護回路を備えた半導体集積回路

Country Status (3)

Country Link
US (1) US4849654A (en])
JP (1) JPS63233560A (en])
KR (1) KR910001425B1 (en])

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427094A (en) * 1987-07-23 1989-01-30 Mitsubishi Electric Corp Mos-type semiconductor memory
US4918663A (en) * 1987-09-16 1990-04-17 Motorola, Inc. Latch-up control for a CMOS memory with a pumped well
JPH07105472B2 (ja) * 1988-07-29 1995-11-13 株式会社東芝 入力保護回路
JPH02119262A (ja) * 1988-10-28 1990-05-07 Toshiba Corp 半導体装置
JP2772530B2 (ja) * 1988-12-05 1998-07-02 三菱電機株式会社 半導体集積回路装置
JP2797844B2 (ja) * 1992-06-17 1998-09-17 三菱電機株式会社 半導体集積回路
KR950002084B1 (ko) * 1992-12-16 1995-03-10 현대전자산업주식회사 고전압 노이즈 감소용 데이타 출력 버퍼회로
US5896054A (en) * 1996-12-05 1999-04-20 Motorola, Inc. Clock driver
KR100301252B1 (ko) 1999-06-23 2001-11-01 박종섭 파워 온 리셋 회로
JP3797186B2 (ja) 2001-10-15 2006-07-12 株式会社デンソー クランプ回路
JP3966016B2 (ja) 2002-02-26 2007-08-29 株式会社デンソー クランプ回路
JP3864864B2 (ja) 2002-07-11 2007-01-10 株式会社デンソー クランプ回路
EP3569653B1 (en) 2017-01-10 2021-03-10 Sumitomo Seika Chemicals Co. Ltd. Epoxy resin composition

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58133038A (ja) * 1982-02-03 1983-08-08 Nec Corp インバ−タ回路
JPS5932024A (ja) * 1982-08-13 1984-02-21 Hitachi Ltd 半導体集積回路
US4626249A (en) * 1985-04-10 1986-12-02 Hamey Oliver R Female standing urination aid
US4716302A (en) * 1986-12-22 1987-12-29 Motorola, Inc. Identity circuit for an integrated circuit using a fuse and transistor enabled by a power-on reset signal

Also Published As

Publication number Publication date
US4849654A (en) 1989-07-18
KR910001425B1 (ko) 1991-03-05
JPS63233560A (ja) 1988-09-29
KR880011920A (ko) 1988-10-31

Similar Documents

Publication Publication Date Title
US5465190A (en) Circuit and method for protecting power components against forward overvoltages
US20070120198A1 (en) Latch-up prevention in semiconductor circuits
JPH0350423B2 (en])
US4965469A (en) Input circuit operable under different source voltages in semiconductor integrated circuit
US6072676A (en) Protection circuit for an excitation current source
US5747837A (en) Semiconductor device having input protective function
JPH0697739B2 (ja) 過電圧保護回路
JP3318774B2 (ja) 半導体装置および固体撮像装置
JPH08335522A (ja) 内燃機関用点火装置
JP2009302367A (ja) 半導体素子の静電保護回路
JP4110701B2 (ja) 過電圧保護回路
JP3179630B2 (ja) エピタキシャル・タブ・バイアス構体及び集積回路
JP2876522B2 (ja) 過電圧検出回路を内蔵するｉｃ
JPH11113169A (ja) 半導体回路の保護装置
US6388302B1 (en) Ground compatible inhibit circuit
JP4239516B2 (ja) 静電保護回路及び同静電保護回路を有する半導体装置
JPH10200056A (ja) バイポーラｉｃ
JP2002271183A (ja) 過電圧保護回路
JP4083481B2 (ja) サージ保護回路
JP3351546B2 (ja) 半導体装置
JP2871329B2 (ja) 半導体集積回路
JPS6281048A (ja) 入力保護回路
JPS60160650A (ja) Ｃｍｏｓ集積回路
JPH0719879B2 (ja) 半導体集積回路装置
JP2760679B2 (ja) 半導体装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees